BCW61D |
Part Number | BCW61D |
Manufacturer | CDIL |
Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon tr... |
Features |
r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW –55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j –a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector –emitter cut –off current VEB = 0; –VCE = 32 V VEB = 0; –VCE = 32 V; Tamb = 150 °C Emitter –base cut –off current IC = 0; –VEB = 4 V Saturation voltages –IC = 10 mA; –lB = 0,25 mA –IC... |
Document |
BCW61D Data Sheet
PDF 79.69KB |
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