BCW61D CDIL SILICON PLANAR EPITAXIAL TRANSISTORS Datasheet. existencias, precio

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BCW61D

CDIL
BCW61D
BCW61D BCW61D
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Part Number BCW61D
Manufacturer CDIL
Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon tr...
Features r
  –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature
  –VCES
  –VCE0
  –VEB0
  –IC
  –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW
  –55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j
  –a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector
  –emitter cut
  –off current VEB = 0;
  –VCE = 32 V VEB = 0;
  –VCE = 32 V; Tamb = 150 °C Emitter
  –base cut
  –off current IC = 0;
  –VEB = 4 V Saturation voltages
  –IC = 10 mA;
  –lB = 0,25 mA
  –IC...

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