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| Part Number | BCW61A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCW61A |
| Manufacturer | Fairchild Semiconductor |
| Title | Transistor |
| Description | BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltag. |
| Features | Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz NF Noise Figure tON Turn On Time tOFF Turn Off Time IC= -0.2mA, VCE= -5V RG=20KΩ, f=1KHz IC= -10mA, IB1= -1mA VBB= -3.6. |
| Part Number | BCW61A |
| Manufacturer | Diotec Semiconductor |
| Title | (BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors |
| Description | BCW61A ... BCW61D BCW61A ... BCW61D PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-31 Plastic case Kunststof. |
| Features |
atur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS
2.5 max
Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C
Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA 2) Kennwerte (Tj = 25°C) Typ. 140 200 300 460 170 250 350 500 – – – – Max. – – – – 220 310 460 . |
| Part Number | BCW61A |
| Manufacturer | CDIL |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIME. |
| Features |
r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW –55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j –a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise . |
| Part Number | BCW61A |
| Manufacturer | Motorola |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | BB BCW61A,B,C,D CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO 'C THERMAL CHARACTERISTICS Characteristic *Total D. |
| Features | . |
| Part Number | BCW61A |
| Manufacturer | Vishay |
| Title | Small Signal Transistors |
| Description | BCW61 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View Mounting Pad Layout .056 (1.43) .052 (1.33) Pin Configuration 1. Base 2. Emitter 3. Collector 0.031 (0.8) 1 2 0.035 (0.9). |
| Features |
• PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN transistors are recommended. Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Cu. |
| Part Number | BCW61A |
| Manufacturer | Kexin |
| Title | General Purpose Transistor |
| Description | SMD Type General Purpose Transistor BCW61A/B/C/D TransistIoCrs Features PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Vol. |
| Features | PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC TSTG Rating -32 -32 -5 -100 350 -55 to +150 Unit V V. |
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| 1 | BCW61 |
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| 2 | BCW61 |
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| 4 | BCW61 |
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| 5 | BCW61 |
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| 7 | BCW61B |
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| 8 | BCW61B |
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| 10 | BCW61B |
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