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BCW60D NPN general purpose transistors


BCW60D
Part Number BCW60D
Distributor Stock Price Buy
Samsung semiconductor
BCW60D
Part Number BCW60D
Manufacturer Samsung semiconductor
Title NPN EPITAXIAL SILICON TRANSISTOR
Description .
Features .
Siemens Semiconductor Group
BCW60D
Part Number BCW60D
Manufacturer Siemens Semiconductor Group
Title NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Description NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX .
Features t Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150
  – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristi.
Fairchild Semiconductor
BCW60D
Part Number BCW60D
Manufacturer Fairchild Semiconductor
Title Transistor
Description BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Diss.
Features F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA VCE=5V, IC=2mA VCB=10V, IE=0, f=1MHz IC=10mA, VCE=5V, f=100MHz IC=0.2mA, VCE=5V RG=2KΩ, f=1KHz IC=10mA, IB1=1mA VBB=3.6V, IB.
Vishay
BCW60D
Part Number BCW60D
Manufacturer Vishay
Title Small Signal Transistors
Description BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout .
Features
• NPN Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW61 Series PNP transistors are recommended. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: E8/10K per 13” .
Infineon Technologies AG
BCW60D
Part Number BCW60D
Manufacturer Infineon Technologies AG
Title NPN Silicon AF Transistors
Description BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX7.
Features l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application.
Motorola
BCW60D
Part Number BCW60D
Manufacturer Motorola
Title GENERAL PURPOSE TRANSISTOR
Description BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total Devi.
Features .
KEXIN
BCW60D
Part Number BCW60D
Manufacturer KEXIN
Title NPN General Purpose Transistors
Description SMD Type NPN General Purpose Transistors BCW60A/B/C/D Transistors IC SOT-23 Unit: mm Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absol.
Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC.
CDIL
BCW60D
Part Number BCW60D
Manufacturer CDIL
Title SILICON PLANAR EPITAXIAL TRANSISTORS
Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIM.
Features se) Emitter
  –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector
  –emitter cut
  –off current VBE = 0; VCE = 32 V VBE = 0; VCE = 32V; Tamb = 150°C Emitter
  –base cut
  –off current IC = 0; VEB = 4 V Sa.
Diotec
BCW60D
Part Number BCW60D
Manufacturer Diotec
Title Surface Mount General Purpose Si-Epi-Planar Transistors
Description BCW60A ... BCW60D BCW60A ... BCW60D NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-31 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 2.5 max 1.3±0.1 Plastic case Kunststoffgehä.
Features .

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