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| Part Number | BC636 |
| Distributor | Stock | Price | Buy |
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| Part Number | BC636 |
| Manufacturer | SeCoS |
| Title | PNP Type Plastic Encapsulate Transistors |
| Description | Elektronische Bauelemente BC636/638/640 PNP Type Plastic Encapsulate Transistors FEATURE Power Dissipation: PCM: 0.83 mW (Tamb=25oC) RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.5±0.2 TO-92 4.55±0.2 3.5±0.2 14.3±0.2 MAXIMUM RATINGS (TA=25 oC unless otherwise speci. |
| Features |
Power Dissipation: PCM: 0.83 mW (Tamb=25oC)
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
4.5±0.2
TO-92
4.55±0.2
3.5±0.2
14.3±0.2
MAXIMUM RATINGS (TA=25 oC unless otherwise specified)
0.4 6+ –00..11 0.43+ –00..0078 (1.27 Typ). 123 1.25+ –00..22 2.54±0.1 1: Emitter 2: Collector 3: Base PARAMETERS SYMBOLS Collector - Emitter Voltage BC636 VCEO BC638 Collector. |
| Part Number | BC636 |
| Manufacturer | NXP |
| Title | PNP medium power transistors |
| Description | PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 1 handbook, halfpage BC636; BC638; BC640 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordan. |
| Features |
• High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers. DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 1 handbook, halfpage BC636; BC638; BC640 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In . |
| Part Number | BC636 |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon AF Transistors |
| Description | PNP Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 635, BC 637, BC 639 (NPN) q BC 636 … BC 640 2 1 3 Type BC 636 BC 638 BC 640 Marking – Ordering Code Q68000-A3365 Q68000-A3366 Q68000-A3367 Pin Configurati. |
| Features | + 150 W ˚C mA A BC 640 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 55 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 636 … BC 640 Electrical Character. |
| Part Number | BC636 |
| Manufacturer | Motorola Inc |
| Title | High Current Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC636/D High Current Transistors PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER BC636 BC638 BC640 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device. |
| Features |
IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — — –100 –10 nAdc µAdc –45 –60 –80 –5.0 — — — — — — — — Vdc –45 –60 –80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = 125°C) 1. Pulse Test: Pulse Wid. |
| Part Number | BC636 |
| Manufacturer | ON Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | 98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components. |
| Features |
• Switching and Amplifier Applications • Complement to BC635 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Emitter Voltage at RBE = 1 kW VCER −45 V Collector−Emitter Voltage VCES −45 V Collector−Emitter Voltage VCEO −45 V Emitter−Base Voltage. |
| Part Number | BC636 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP EPITAXIAL SILICON TRANSISTOR |
| Description | BC636 — PNP Epitaxial Silicon Transistor October 2015 BC636 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Complement to BC635 Ordering Information Part Number BC636TA Top Mark BC636 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Ba. |
| Features |
• Switching and Amplifier Applications • Complement to BC635 Ordering Information Part Number BC636TA Top Mark BC636 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function o. |
| Part Number | BC636 |
| Manufacturer | Micro Electronics |
| Title | COMPLEMENTARY SILICON TRANSISTORS |
| Description | . |
| Features | . |
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|---|---|---|---|---|
| 1 | BC635 |
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| 2 | BC635 |
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| 3 | BC635 |
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| 4 | BC635 |
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| 5 | BC635 |
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| 6 | BC635 |
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| 7 | BC635 |
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|
| 8 | BC635 |
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| 9 | BC635 |
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|
| 10 | BC636-16 |
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Desde 2024. D4U Semiconductor.
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