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BC636 |
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| Part Number | BC636 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC636/D High Current Transistors PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER BC636 BC638 BC640 MAXIMUM RATINGS Rating Collector – Emitter... |
| Features |
IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — — –100 –10 nAdc µAdc –45 –60 –80 –5.0 — — — — — — — — Vdc –45 –60 –80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = 125°C) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC636 BC638 BC640 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) ... |
| Document |
 BC636 Data Sheet
PDF 116.45KB |
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