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| Part Number | BC635 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BC635 |
| Manufacturer | Micro Electronics |
| Title | COMPLEMENTARY SILICON TRANSISTORS |
| Description | . |
| Features | . |
| Part Number | BC635 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Epitaxial Planar Transistor |
| Description | ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base. |
| Features | . |
| Part Number | BC635 |
| Manufacturer | CDIL |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range. |
| Features | . |
| Part Number | BC635 |
| Manufacturer | NXP |
| Title | NPN medium power transistors |
| Description | NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3 BC635; BC637; BC639 DESCRIPTION base collector emitter 1 handbook, halfpage 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with th. |
| Features |
• High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3 BC635; BC637; BC639 DESCRIPTION base collector emitter 1 handbook, halfpage 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES . |
| Part Number | BC635 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon AF Transistors |
| Description | . |
| Features | . |
| Part Number | BC635 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter V. |
| Features | dwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1. Emitter 2. Collector 3. Base Value 45 60 100 45 60 100 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 Units V V V V V V V V V V A A mA W °C °C Min. 45 60 80 25 40 40 25 Typ. 100 Max. Units V V V 0.1. |
| Part Number | BC635 |
| Manufacturer | ON Semiconductor |
| Title | High Current Transistors |
| Description | BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC635 45 BC637 60 BC639 80 Collector - Base Voltage VCBO Vdc BC635 45 BC637 60 BC639 80 . |
| Features |
• Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC635 45 BC637 60 BC639 80 Collector - Base Voltage VCBO Vdc BC635 45 BC637 60 BC639 80 Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C Total Device Dissipa. |
| Part Number | BC635 |
| Manufacturer | SeCoS |
| Title | NPN Type Plastic Encapsulate Transistors |
| Description | Elektronische Bauelemente BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor FEATURE High current transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 4.5±0.2 14.3±0.2 0.4 6+–00..11 0.43+–00..0078 (1.27 Typ). 123 1.25+–00..22. |
| Features |
High current transistor
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
4.5±0.2
14.3±0.2
0.4 6+ –00..11 0.43+ –00..0078 (1.27 Typ). 123 1.25+ –00..22 2.54±0.1 1: Emitter 2: Collector 3: Base MAXIMUM RATINGS (TA=25 oC unless otherwise specified) PARAMETERS SYMBOLS Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Co. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC636 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 2 | BC636 |
SeCoS |
PNP Type Plastic Encapsulate Transistors |
|
| 3 | BC636 |
Motorola Inc |
High Current Transistors |
|
| 4 | BC636 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 5 | BC636 |
NXP |
PNP medium power transistors |
|
| 6 | BC636 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors |
|
| 7 | BC636 |
Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 8 | BC636 |
Micro Electronics |
COMPLEMENTARY SILICON TRANSISTORS |
|
| 9 | BC636-16 |
ON Semiconductor |
High Current Transistors |
|
| 10 | BC636TA |
Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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