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BC635 |
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| Part Number | BC635 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC635/D High Current Transistors NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER BC635 BC637 BC639 MAXIMUM RATINGS Rating Collector – Emitter... |
| Features |
V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO — — — — 100 10 nAdc µAdc 45 60 80 5.0 — — — — — — — — Vdc 45 60 80 — — — — — — Vdc Vdc
Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125°C) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC635 BC637 BC639 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characte... |
| Document |
 BC635 Data Sheet
PDF 116.59KB |
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