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AOB7S60 |
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| Part Number | AOB7S60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offlin. |
| Features |
epetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM IAR EAR EAS
7 5
33 1.7 43 86
7 * 5 * TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 34 0.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT7S60/AOB7S60 65 0.5 AOTF7S60L 65 -- Maximum Junction-to-Case RθJC * Drain current limited. |
| Datasheet |
 AOB7S60 Data Sheet
PDF 288.81KB |
| Distributor | Stock | Price | Buy |
|---|
AOB7S60 |
| Part Number | AOB7S60 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 33. |
| Features |
·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS . |
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Desde 2024. D4U Semiconductor.
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