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| Part Number | 3N163 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 3N163 |
| Manufacturer | Micross |
| Title | High Speed Switch |
| Description | 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. FEATURES. |
| Features | DIRECT REPLACEMENT FOR INTERSIL 3N163 ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) ‐65°C to +200°C ‐55°C to +150°C 375mW 50mA Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation 3N163 Features: MAXIMUM CURRENT Very high Input Impedance Drain Current Low Capacitan. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
|
| 2 | 3N164 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 3 | 3N164 |
Micross |
High Speed Switch |
|
| 4 | 3N165 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
|
| 5 | 3N165 |
Micross |
Amplifier |
|
| 6 | 3N166 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
|
| 7 | 3N166 |
Micross |
Amplifier |
|
| 8 | 3N169 |
Motorola Semiconductor |
(3N169 - 3N171) MOSFETs Switching |
|
| 9 | 3N169 |
ETC |
MOS FIELD-EFFECT TRANSISTORS |
|
| 10 | 3N100E |
Motorola |
MTB3N100E |
|
Desde 2024. D4U Semiconductor.
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