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3N163 |
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| Part Number | 3N163 |
| Manufacturer | Micross |
| Description | 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically s... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL 3N163 ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) ‐65°C to +200°C ‐55°C to +150°C 375mW 50mA
Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation 3N163 Features: MAXIMUM CURRENT Very high Input Impedance Drain Current Low Capacitance MAXIMUM VOLTAGES High Gain Drain to Gate High Gate Breakdown Voltage Drain to Source Low Threshold Voltage Peak Gate to Source2 3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise no... |
| Document |
 3N163 Data Sheet
PDF 377.64KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
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| 2 | 3N163 |
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P-Channel Enhancement-Mode MOS Transistors |
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| 3 | 3N164 |
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| 4 | 3N164 |
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High Speed Switch |
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| 5 | 3N165 |
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Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
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| 6 | 3N165 |
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Amplifier |
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Desde 2024. D4U Semiconductor.
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