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| Part Number | 3N169 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 3N169 |
| Manufacturer | ETC |
| Title | MOS FIELD-EFFECT TRANSISTORS |
| Description | 3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applications. I • Low Switching Voltages - VGS(th)';; 3.0 Vdc • Fast Switching Times .- tr';; 10 ns I • Low Drain-Source Resistance rds(on) = 200 Ohms (Max). |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
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| 2 | 3N163 |
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| 3 | 3N163 |
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| 4 | 3N164 |
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| 5 | 3N164 |
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| 6 | 3N165 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
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| 7 | 3N165 |
Micross |
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| 8 | 3N166 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
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| 9 | 3N166 |
Micross |
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| 10 | 3N100E |
Motorola |
MTB3N100E |
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Desde 2024. D4U Semiconductor.
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