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2SK209 |
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| Part Number | 2SK209 |
| Manufacturer | UTC |
| Description | The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications. FEATURES * High breakdown voltage: VGDS= −50V * High input impedance: IGSS= −1nA (max) at VGS= −3. |
| Features |
* High breakdown voltage: VGDS= −50V * High input impedance: IGSS= −1nA (max) at VGS= −30V ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SK209L-xx-AE3-R 2SK209G-xx-AE3-R Note: Pin Assignment: S: Source D: Drain G: Gate Package SOT-23 Pin Assignment 1 2 3 S D G Packing Tape Reel 2SK209G-xx-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Green Package (1) R: Tape Reel (2) AE3: SOT-23 (3) xx: refer to Classification of IDSS (4) G: Halogen Free and Lead Free, L: Lead Free MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 4 QW. |
| Datasheet |
 2SK209 Data Sheet
PDF 450.68KB |
| Distributor | Stock | Price | Buy |
|---|
2SK209 |
| Part Number | 2SK209 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 2 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2004-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2004-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 8 | 2SK2007 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2008 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 10 | 2SK2009 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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