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2SK2002-01M |
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| Part Number | 2SK2002-01M |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VG. |
| Features | R)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A 4.0 4.5 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 500 µA Ciss Input capacitance 600 900 Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 10 15 pF Coss Output capacitance 50 75 tr Rise time td(on) Turn-on delay time tf Fall time VGS=10V;ID=3A; VDD=300V; RL=10Ω 10 15 15 25 ns 10 15 td(off) Turn-off delay t. |
| Datasheet |
 2SK2002-01M Data Sheet
PDF 212.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 3 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2004-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2004-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2007 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 8 | 2SK2008 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2009 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
Desde 2024. D4U Semiconductor.
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