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2SK2008 |
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| Part Number | 2SK2008 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain. |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) * I DR Pch * Tch Tstg 2 1 Ratings 250 ±30 20 80 20 60 150. |
| Datasheet |
 2SK2008 Data Sheet
PDF 33.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 2 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2004-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2004-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 8 | 2SK2007 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2009 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
Desde 2024. D4U Semiconductor.
|