Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SK2010 |
| Part Number | 2SK2010 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VAL. |
| Features | DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; ID=100µA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA VSD Diode Forward On-Voltage IF=4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2A IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 Ciss Input Capacitance Crss Rever. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 2 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK2013 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 4 | 2SK2015 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2016 |
Panasonic |
Silicon N-Channel Power F-MOS |
|
| 6 | 2SK2018-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2018-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 8 | 2SK2019-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 9 | 2SK2019-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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