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2SK2010 |
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| Part Number | 2SK2010 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchin... |
| Features |
DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
V(BR)GSS Gate-Source Breakdown Voltage
VDS= 0; ID=100µA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
VSD
Diode Forward On-Voltage
IF=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2A
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=20V; VGS=0V; fT=1MHz
tr
Rise Time
td(on) Turn-on Delay Time
tf
Fall Time
td(off) Turn-off Delay Time
VGS=10V; ID=2A; VDD=100V; RL=50Ω
2SK20... |
| Document |
 2SK2010 Data Sheet
PDF 217.21KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 2 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 3 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 2SK2013 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2015 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 6 | 2SK2016 |
Panasonic |
Silicon N-Channel Power F-MOS |
|
Desde 2024. D4U Semiconductor.
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