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2SJ90 |
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| Part Number | 2SJ90 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SJ90 SILICON MONOLITHIC P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . High lYf s l : I Yf s l =22ms(Typ. (VdS=-10V, VGS=0,f=lkHz, lDSS=-3mA) . Good Pair Characteristics : 1 VGS1-VGS2 I =30mV (Max . (Vds="10V , lD=-lmA) . Very Low Noise : NF=0. 5dB(Typ. (Vds=-1°v > lD=-lm. |
| Features | . 1 Chip Dual Type. . High lYf s l : I Yf s l =22ms(Typ. (VdS=-10V, VGS=0,f=lkHz, lDSS=-3mA) . Good Pair Characteristics : 1 VGS1-VGS2 I =30mV (Max . (Vds="10V , lD=-lmA) . Very Low Noise : NF=0. 5dB(Typ. (Vds=-1°v > lD=-lmA, Rg=lkfi, f=lkHz) . Very High Input Impedance : lGSS=10nA(Max. (VGS=30V, VDS=0) Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation SYMBOL VGDS IG PD RATING 30 10 200 UNIT mA nW/UNr: 1. DRAIN 1 2. GATE 1 a SOURCE 1 4. SUBSTRATE JEDEC Toshiba 5 SOURCE 2 6 GATE 2 7. DRAIN 2 2-18A1A Junction Temperature 125 Wei. |
| Datasheet |
 2SJ90 Data Sheet
PDF 143.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ0164 |
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| 2 | 2SJ0536 |
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| 3 | 2SJ103 |
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| 4 | 2SJ104 |
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| 5 | 2SJ105 |
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| 6 | 2SJ106 |
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| 7 | 2SJ107 |
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| 8 | 2SJ108 |
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| 9 | 2SJ109 |
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| 10 | 2SJ111 |
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Desde 2024. D4U Semiconductor.
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