2SH29 |
Part Number | 2SH29 |
Manufacturer | Hitachi Semiconductor |
Description | 2SH29 Silicon N Channel IGBT High Speed Power Switching ADE-208-791A(Z) 2nd. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak curren. |
Features |
• High speed switching • Low on-voltage Outline TO –220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 30 60 75 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 —. |
Datasheet |
2SH29 Data Sheet
PDF 43.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SH20 |
Hitachi Semiconductor |
Silicon N-Channel IGBT | |
2 | 2SH20 |
Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR | |
3 | 2SH21 |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SH21 |
Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR | |
5 | 2SH22 |
Hitachi Semiconductor |
N-Channel MOSFET | |
6 | 2SH26 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SH27 |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SH28 |
Hitachi Semiconductor |
N-Channel MOSFET | |
9 | 2SH11 |
Hitachi Semiconductor |
Silicon N-Channel IGBT | |
10 | 2SH12 |
Hitachi Semiconductor |
Silicon N-Channel IGBT |