2SH21 |
Part Number | 2SH21 |
Manufacturer | Hitachi Semiconductor |
Description | ADE–208–294 (Z) 2SH21 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak. |
Features |
• High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 50 100 150 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC * Tj IC VGES ———————————————. |
Datasheet |
2SH21 Data Sheet
PDF 43.71KB |
Distributor | Stock | Price | Buy |
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2SH21 |
Part Number | 2SH21 |
Manufacturer | Toshiba |
Title | SILICON P EMITTER PLANAR TYPE TRANSISTOR |
Description | SILICON P EMITTER PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SH20 2SH21 RELAXATION OSCILLATOR, SCR TRIGGER AND TIMER APPLICATIONS. FEATURES • High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (. |
Features |
• High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS Base 2 - Base 1 Voltage Base 1 - Emitter Voltage Base 2 - Emitter Voltage Peak Emitter Current Emitter Current Allowable Power Dissipation Junction Tem. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SH20 |
Hitachi Semiconductor |
Silicon N-Channel IGBT | |
2 | 2SH20 |
Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR | |
3 | 2SH22 |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SH26 |
Hitachi Semiconductor |
N-Channel MOSFET | |
5 | 2SH27 |
Hitachi Semiconductor |
N-Channel MOSFET | |
6 | 2SH28 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SH29 |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SH11 |
Hitachi Semiconductor |
Silicon N-Channel IGBT | |
9 | 2SH12 |
Hitachi Semiconductor |
Silicon N-Channel IGBT | |
10 | 2SH13 |
Hitachi Semiconductor |
Silicon N-Channel IGBT |