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2SH20 |
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| Part Number | 2SH20 |
| Manufacturer | Hitachi Semiconductor |
| Description | ADE–208–293 (Z) 2SH20 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak. |
| Features |
• High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 36 60 100 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC * Tj IC VGES ————————————————. |
| Datasheet |
 2SH20 Data Sheet
PDF 43.72KB |
| Distributor | Stock | Price | Buy |
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2SH20 |
| Part Number | 2SH20 |
| Manufacturer | Toshiba |
| Title | SILICON P EMITTER PLANAR TYPE TRANSISTOR |
| Description | SILICON P EMITTER PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SH20 2SH21 RELAXATION OSCILLATOR, SCR TRIGGER AND TIMER APPLICATIONS. FEATURES • High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (. |
| Features |
• High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS Base 2 - Base 1 Voltage Base 1 - Emitter Voltage Base 2 - Emitter Voltage Peak Emitter Current Emitter Current Allowable Power Dissipation Junction Tem. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SH21 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SH21 |
Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR |
|
| 3 | 2SH22 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SH26 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 5 | 2SH27 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 6 | 2SH28 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 7 | 2SH29 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 8 | 2SH11 |
Hitachi Semiconductor |
Silicon N-Channel IGBT |
|
| 9 | 2SH12 |
Hitachi Semiconductor |
Silicon N-Channel IGBT |
|
| 10 | 2SH13 |
Hitachi Semiconductor |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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