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| Part Number | 2SD870 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD870 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applic. |
| Features | S MIN TYP. MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 5.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 3.0 5.0 V 1.5 V 10 μA hFE DC Current Gain IC= 1A; VCE= 5V 8 12 VECF C-E Diode Forward Voltage IF= 5A 1.6 2.0 V COB Output Ca. |
| Part Number | 2SD870 |
| Manufacturer | Toshiba |
| Title | NPN Transistor |
| Description | : SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD870 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : V CBO=1500V • Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A) • High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A) • Built-in Damper Type. • Glass Passi. |
| Features |
• High Voltage : V CBO=1500V • Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A) • High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A) • Built-in Damper Type. • Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volt. |
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| 1 | 2SD871 |
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| 2 | 2SD871 |
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Desde 2024. D4U Semiconductor.
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