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2SD870 |
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| Part Number | 2SD870 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust de... |
| Features |
S
MIN TYP. MAX UNIT
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5.0
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
3.0 5.0
V
1.5
V
10 μA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
12
VECF
C-E Diode Forward Voltage
IF= 5A
1.6 2.0
V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
IC= 4A, IBend= 0.8A
165
pF
3
MHz
0.5 1.0 μs
NOTICE： ISC reserves the rights to ma... |
| Document |
 2SD870 Data Sheet
PDF 183.12KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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