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| Part Number | 2SD873 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD873 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter app. |
| Features | ter Voltage Breakdown IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A MIN TYP. MAX UNIT 140 V 0.4 1.4 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 4V 1.2 2.2 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 8A; VCE= 4V 15 60 hFE-2 DC Current Gain IC= 16A; V. |
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