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2SD799 SILICON POWER TRANSISTOR Datasheet


2SD799

SavantIC
2SD799
Part Number 2SD799
Manufacturer SavantIC
Title Headers & Wire Housings
Description ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High voltage switching applications PINNING PIN 1 2 3 B...
Features rent gain Diode forward voltage Collector output capacitance CONDITIONS IC=10mA ; IB=0 IC=4A ;IB=0.04A IC=4A; IB=0.04A VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V IE=4A; IB=0 f=1MHz;VCB=50V 35 600 100 MIN 400 www.datasheet4u.com 2SD799 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hF...

Document Datasheet 2SD799 datasheet pdf (116.28KB)
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2SD799

Toshiba
2SD799
Part Number 2SD799
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 2SD799 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current.
Features
• High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A)
• Monolithic Construction with Built-in Base- Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 10.5MAX ., _gf3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage .

Document 2SD799 datasheet pdf


2SD799

INCHANGE
2SD799
Part Number 2SD799
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for ro.
Features ) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VECF C-E Diode Forward Voltage IF= 4A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 2V hFE-.

Document 2SD799 datasheet pdf



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