Busque con el número de pieza junto con el fabricante o la descripción
2SD799 |
Click to view a larger image
| Part Number | 2SD799 |
| Manufacturer | SavantIC |
| Description | ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High voltage switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage . |
| Features | rent gain Diode forward voltage Collector output capacitance CONDITIONS IC=10mA ; IB=0 IC=4A ;IB=0.04A IC=4A; IB=0.04A VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V IE=4A; IB=0 f=1MHz;VCB=50V 35 600 100 MIN 400 www.datasheet4u.com 2SD799 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VECF COB TYP. MAX UNIT V 2.0 2.5 0.5 3.0 V V mA mA 3.0 V pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD799 Fig.2 Outline dimensions 3 . |
| Datasheet |
 2SD799 Data Sheet
PDF 116.28KB |
| Distributor | Stock | Price | Buy |
|---|
2SD799 |
| Part Number | 2SD799 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃). |
| Features | ) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VECF C-E Diode Forward Voltage IF= 4A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V COB Output Capacitance IE= 0 ; VCB= 50V;f= 1.0MHz Switching. |
2SD799 |
| Part Number | 2SD799 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | 2SD799 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A) • Monolithic Construction with Built-in Base- Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 10.5MAX .. |
| Features |
• High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A) • Monolithic Construction with Built-in Base- Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 10.5MAX ., _gf3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD792 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD792 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD793 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD794 |
NEC |
NPN Silicon Power Transistors |
|
| 5 | 2SD794 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SD794 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD794A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD795 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD796 |
Fuji Semiconductors |
High Speed Switching Transistors |
|
| 10 | 2SD797 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|