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2SD799 |
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| Part Number | 2SD799 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VECF
C-E Diode Forward Voltage
IF= 4A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
COB
Output Capacitance
IE= 0 ; VCB= 50V;f= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= IB2= 40mA; RL= 25Ω; VCC= 100V; PW= 20μs, Duty Cycle≤1%
MIN TYP. MAX UNIT
400
V
2.0
V
2.5
V
3.0
V
0.5
mA
3.0
mA
600
100... |
| Document |
 2SD799 Data Sheet
PDF 206.45KB |
Desde 2024. D4U Semiconductor.
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