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2SD797 |
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| Part Number | 2SD797 |
| Manufacturer | SavantIC |
| Description | ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·High power amplifier applications ·High power switching applications ·DC-DC converter applications ·Regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO. |
| Features | Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=15A; IB=3A IC=15A; IB=3A VCB=100V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=15A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=5V 60 10 400 1.5 MIN 80 TYP. www.datasheet4u.com 2SD797 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT MAX UNIT V 1.5 2.5 0.1 0.1 200 V V mA mA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time RL=10@;IB1=-IB2=0.5A; VCC=50V 2.5 6.0 1.5 µs µs µs 2 SavantIC. |
| Datasheet |
 2SD797 Data Sheet
PDF 145.89KB |
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2SD797 |
| Part Number | 2SD797 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High Power switching applications. ·DC-DC converter appli. |
| Features | Voltage Breakdown IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A MIN TYP. MAX UNIT 80 V 0.6 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 3A 1.4 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 15A. |
2SD797 |
| Part Number | 2SD797 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN TRIPLE DIFFUSED TYPE HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS REGULATOR APPLICATIONS. FEATURES • High Power Dissipation : Pc=200W (Tc=25°C) • High Collector Current : I C=30A INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (. |
| Features |
• High Power Dissipation : Pc=200W (Tc=25°C) • High Collector Current : I C=30A INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation ?l-o r ' Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO VEBO ic IB ?C T.i T ste ELECTRICAL CH. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD792 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD792 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD793 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD794 |
NEC |
NPN Silicon Power Transistors |
|
| 5 | 2SD794 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SD794 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD794A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD795 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD796 |
Fuji Semiconductors |
High Speed Switching Transistors |
|
| 10 | 2SD798 |
Toshiba |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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