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| Part Number | 2SD555 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD555 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current and high power applications. ABSOLUTE MAXIMUM RATIN. |
| Features | 1A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 50mA; VCE= 5V hFE-2 DC Current Gain IC= 2A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V MIN TYP. MAX UNIT 3.0 V 3.0 V 0.1 mA 0.1 mA 20 50 40 70 200 300 pF 7 MHz hFE-2 Classificati. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD550 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD551 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD551 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD552 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD552 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD552 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD553 |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SD553 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD553 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD554 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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