2SD555 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD555

INCHANGE
2SD555
2SD555 2SD555
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Part Number 2SD555
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL...
Features 1A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 50mA; VCE= 5V hFE-2 DC Current Gain IC= 2A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V MIN TYP. MAX UNIT 3.0 V 3.0 V 0.1 mA 0.1 mA 20 50 40 70 200 300 pF 7 MHz
 hFE-2 Classifications S R Q 40-80 60-120 100-200 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented ...

Document Datasheet 2SD555 Data Sheet
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