2SD555 |
Part Number | 2SD555 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
Features |
1A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
MIN TYP. MAX UNIT
3.0
V
3.0
V
0.1 mA
0.1 mA
20 50
40 70 200
300
pF
7
MHz
hFE-2 Classifications S R Q 40-80 60-120 100-200 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented ... |
Document |
2SD555 Data Sheet
PDF 203.62KB |
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