2SD551 Datasheet. existencias, precio

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2SD551 SILICON POWER TRANSISTOR


2SD551
Part Number 2SD551
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INCHANGE
2SD551
Part Number 2SD551
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB681 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier applications. ·Recommended for use in output stage of 80 watts pow.
Features C= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V COB Output Capacitan.

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