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2SD551 |
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| Part Number | 2SD551 |
| Manufacturer | INCHANGE |
| Description | ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB681 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... |
| Features |
C= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
hFE Classifications R O 40-80 70-140 MIN TYP. MAX UNIT 150 V 5 V 2.5 V 1.5 V 0.1 mA 0.1 mA 40 140 15 MHz 250 pF NOTICE： ISC reserves the rights... |
| Document |
 2SD551 Data Sheet
PDF 203.58KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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