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| Part Number | 2SD2256 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2256 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO . |
| Features | 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA 3.5 V VBE(sat)-1 Base-Emitter Satu. |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2250 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2250 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD2251 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD2251 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2252 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SD2253 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2253 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2254 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD2254 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SD2255 |
Panasonic Semiconductor |
Power Transistors |
|
Desde 2024. D4U Semiconductor.
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