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| Part Number | 2SD2250 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2250 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Complement to Type 2SB1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable o. |
| Features | ise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 6mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 ICEO Collector Cutoff Current VCE= 140V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain . |
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Desde 2024. D4U Semiconductor.
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