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2SD2250 |
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| Part Number | 2SD2250 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Co... |
| Features |
ise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 6mA
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
hFE-2 Classifications Q P 5000-15000 8000-30000 2SD2250 MIN TYP. MAX UNIT 140 ... |
| Document |
 2SD2250 Data Sheet
PDF 205.04KB |
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Desde 2024. D4U Semiconductor.
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