2SD2256 INCHANGE Silicon NPN Darlington Power Transistor Datasheet. existencias, precio

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2SD2256

INCHANGE
2SD2256
2SD2256 2SD2256
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Part Number 2SD2256
Manufacturer INCHANGE
Description ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOL...
Features 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA 3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 12A ,IB= 24mA 3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A ,IB= 250mA 4.5 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA ICEO Collector Cutoff cur...

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