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| Part Number | 2SD2150 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2150 |
| Manufacturer | Rohm |
| Title | Transistor |
| Description | Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol . |
| Features | 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power d. |
| Part Number | 2SD2150 |
| Manufacturer | HOTTECH |
| Title | NPN Transistor |
| Description | Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-Emitter V. |
| Features | Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation VCBO VCEO VEBO IC PC 40 20 6 2000 500 V V V mA mW Ju. |
| Part Number | 2SD2150 |
| Manufacturer | Jiangsu Changjiang Electronics |
| Title | NPN Transistor |
| Description | www.DataSheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Oper. |
| Features | Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter sat. |
| Part Number | 2SD2150 |
| Manufacturer | Weitron Technology |
| Title | NPN Transistor |
| Description | www.DataSheet.co.kr 2SD2150 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Tempe. |
| Features | cteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=2V, I C=100mA Collector-Emitter Saturation Voltage IC=2A, I B=100mA 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% hFE VCE(sat) 120 560 0.5 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=2V, I C=500mA, f=100MHz Output Capacitance VCB=10V, IE=0, f=1MHz fT Cob 290 25 MHz pF CLASSIFICATION OF hFE Marking Rank hFE . |
| Part Number | 2SD2150 |
| Manufacturer | Guangdong Kexin Industrial |
| Title | Low Frequency Transistor |
| Description | www.DataSheet.co.kr SMD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +0.1 0.48-0.1 1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1. |
| Features | +0.1 2.50-0.1 Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +0.1 0.48-0.1 1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power diss. |
| Part Number | 2SD2150 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 2 MARKING . |
| Features | Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 2 MARKING CFR CFS 1 Base 3 Emitter SOT-89 4 A E B F G H J 123 C BCE D K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.4. |
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