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| Part Number | 2SD2151 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2151 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MA. |
| Features | lector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA . |
| Part Number | 2SD2151 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Low collector to emitter saturation voltage ·Large collector current IC APPLICATIONS ·For power switching applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO . |
| Features | ter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=10mA, IB=0 IC=6A; IB=0.3A IC=10A; IB=1A IC=6A; IB=0.3A IC=10A; IB=1A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=6A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz 45 90 30 MIN 80 www.datasheet4u.com 2SD215. |
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| 1 | 2SD2150 |
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| 2 | 2SD2150 |
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| 3 | 2SD2150 |
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| 4 | 2SD2150 |
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