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2SD2150 |
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| Part Number | 2SD2150 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25... |
| Features |
Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A
2SD2150(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation
VCBO VCEO VEBO
IC PC
40 20 6 2000 500
V V V mA mW
Junction Temperature
TJ 150
Storage Temperature
Tstg -55-150
1. BASE 2. COLLECTO 3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditio... |
| Document |
 2SD2150 Data Sheet
PDF 241.97KB |
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