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| Part Number | 2SD1377 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1377 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 4A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-. |
| Features | e specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 30mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 6mA ICBO Collector Cutoff Current VCB= 120V; I. |
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Desde 2024. D4U Semiconductor.
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