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| Part Number | 2SD1375 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1375 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Base Voltage- : VCBO= 300V(Min.) ·Good Linearity of hFE ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage,high-speed,power switching regulators and gene. |
| Features | fied SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 MIN TYP. MAX UNIT 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 3A; IB= 0.6A VCB= 300V; IE= 0 VEB= 7V; IC= 0. |
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Desde 2024. D4U Semiconductor.
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