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2SD1375 |
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| Part Number | 2SD1375 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Base Voltage- : VCBO= 300V(Min.) ·Good Linearity of hFE ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable ope... |
| Features |
fied
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
MIN TYP. MAX UNIT
300
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
IC= 3A; IB= 0.6A VCB= 300V; IE= 0 VEB= 7V; IC= 0 IC= 1A ; VCE= 5V IC= 3A ; VCE= 5V
1.2
V
0.1 mA
0.1 mA
30
150
10
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V, ftest= 1MHz
5
MHz
NOTICE： ISC reserves the rights to make changes of... |
| Document |
 2SD1375 Data Sheet
PDF 189.72KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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