2SD1377 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD1377

INCHANGE
2SD1377
2SD1377 2SD1377
zoom Click to view a larger image
Part Number 2SD1377
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 4A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi...
Features e specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 30mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 6mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current hFE -1 DC Current Gain hFE -2 DC Current Gain VEB= 5V; IC= 0 IC= 4A; VCE= 3V IC= 8A; VCE= 3V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V MIN TYP. M...

Document Datasheet 2SD1377 Data Sheet
PDF 196.18KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD1370
INCHANGE
NPN Transistor Datasheet
2 2SD1371
Inchange Semiconductor
Silicon NPN Transistor Datasheet
3 2SD1372
INCHANGE
NPN Transistor Datasheet
4 2SD1373
INCHANGE
NPN Transistor Datasheet
5 2SD1374
INCHANGE
NPN Transistor Datasheet
6 2SD1375
SavantIC
SILICON POWER TRANSISTOR Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad