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| Part Number | 2SD1357 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1357 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB997 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP. |
| Features | stor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1357 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector. |
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Desde 2024. D4U Semiconductor.
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