2SD1357 |
Part Number | 2SD1357 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to... |
Features |
stor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD1357
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3A; IB= 6mA VCB= 100V; IE= 0
2.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC= 3A ; VCE= 3V
2000
15000
hFE -2
DC Current Gai... |
Document |
2SD1357 Data Sheet
PDF 168.58KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1350 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1350A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1351 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
4 | 2SD1351 |
Thinki Semiconductor |
NPN Complementary Silicon Power Transistors | |
5 | 2SD1352 |
INCHANGE |
NPN Transistor | |
6 | 2SD1353 |
Toshiba |
Silicon NPN Transistor |