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| Part Number | 2SD1355 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1355 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM R. |
| Features | . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature. |
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| 1 | 2SD1350 |
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| 2 | 2SD1350A |
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| 3 | 2SD1351 |
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| 5 | 2SD1352 |
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| 6 | 2SD1353 |
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| 7 | 2SD1354 |
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| 8 | 2SD1356 |
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| 9 | 2SD1357 |
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| 10 | 2SD1357 |
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Desde 2024. D4U Semiconductor.
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