2SD1355 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD1355

INCHANGE
2SD1355
2SD1355 2SD1355
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Part Number 2SD1355
Manufacturer INCHANGE
Description ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB995 ·Minimum Lot-to-Lot variations for robust device...
Features wise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz MIN TYP. MAX UNIT 100 V 2.0 V 1.5 V 100 μA 100 μA 40 240 20 12 MHz 100 pF
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