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| Part Number | 2SD1237L |
| Distributor | Stock | Price | Buy |
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| Part Number | 2SD1237L |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features -,。 Low VCE(sat),large current capacity. / Applications ，。 Suitable for relay drivers, high-speed inverters, converters, and other general large current switching applications. / Equivalent Circuit / Pinning . |
| Features | -,。 Low VCE(sat),large current capacity. / Applications ，。 Suitable for relay drivers, high-speed inverters, converters, and other general large current switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70～140 R 100～200 S 140～280 http://www.fsbrec.com 1/6 2. |
| Part Number | 2SD1237L |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Large Current Capacity ·Complement to Type 2SB921L ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters, and other general high-cu. |
| Features | ETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.4 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4. |
| Part Number | 2SD1237L |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SB921L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base . |
| Features | se breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE== IC=1mA ;IE=0 IE=1mA; IC=0 IC=4A; IB=0.4A VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=4A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 80 90 6 www.datasheet4u.com 2SD1237L SYMBOL V(BR)CEO V(BR). |
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| 1 | 2SD1237 |
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Desde 2024. D4U Semiconductor.
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