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| Part Number | 2SD1235 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1235 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Large Current Capacity ·Complement to Type 2SB919 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters. ABSOLUTE MA. |
| Features | Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 4A; VCE= 2V fT Cu. |
| Part Number | 2SD1235 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Epitaxial Planar Silicon Transistors |
| Description | Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications · Large current switching of relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V . |
| Features |
· Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO. |
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| 6 | 2SD1236L |
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| 9 | 2SD1237 |
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| 10 | 2SD1237L |
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