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| Part Number | 2SD1236L |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1236L |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Large Current Capacity ·Complement to Type 2SB920L ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters, and other general high-cu. |
| Features | TER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 0.4 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V;. |
| Part Number | 2SD1236L |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Epitaxial Planar Silicon Transistors |
| Description | Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat). |
| Features |
· Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · High current capacity. Package Dimensions unit:mm 2010C [2SB920L/2SD1236L] ( ) : 2SB920L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VC. |
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| 10 | 2SD1237L |
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