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| Part Number | 2SC3365 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC3365 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL. |
| Features | oltage IC= 0.2A; RBE= ∞; L= 100mH 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 2A; IB2= -0.6A; VBE= -5V; L= 180μH; Clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 400. |
| Part Number | 2SC3365 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | With TO-3PN package ·High voltage ,high speed APPLICATIONS ·For high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM. |
| Features | ration voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE=:,L=100mH IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE=: IC=5A ; VCE=5V IC=10A ; VCE=5V 12 5 MIN 400 10 2SC3365 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 50 50 V V µA µ. |
| Part Number | 2SC3365 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle. |
| Features | V I C = 5 A, IB = 1 A*1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 10 — — 12 5 — — — — — — — — — — — — — — — — 50 50 — — 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf 2 . |
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Desde 2024. D4U Semiconductor.
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