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2SC3365 |
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| Part Number | 2SC3365 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (... |
| Features |
V I C = 5 A, IB = 1 A*1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO I CBO I CEO
10 — — 12 5 — — — — —
— — — — — — — — — —
— 50 50 — — 1.0 1.5 1.0 2.5 1.0
V µA µA
DC current transfer ratio
hFE1 hFE2
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
VCE(sat) VBE(sat) t on t stg tf
2
2SC3365
Maximum Collector Dissipation Curve 120 Collector power dissipation Pc (W) 100 30 iC (peak) Collector Current IC (A) 10 80 IC (max) 3 (Continuous)
µs 25 µs 50 s 0µ 25 ms 1
Area of Safe Operat... |
| Document |
 2SC3365 Data Sheet
PDF 41.67KB |
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